IXYS RF

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 250 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id : 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 25V FET Feature : - Power Dissipation (Max) : 300W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247 (IXFH) Package / Case : TO-247-3

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V Vgs(th) (Max) @ Id : 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V FET Feature : - Power Dissipation (Max) : 180W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247 (IXFH) Package / Case : TO-247-3

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id : 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V FET Feature : - Power Dissipation (Max) : 500W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-264 (IXFK) Package / Case : TO-264-3, TO-264AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V Vgs(th) (Max) @ Id : 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V FET Feature : - Power Dissipation (Max) : 560W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-264 (IXFK) Package / Case : TO-264-3, TO-264AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 120 mOhm @ 22A, 10V Vgs(th) (Max) @ Id : 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs : 156nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V FET Feature : - Power Dissipation (Max) : 500W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-264 (IXFK) Package / Case : TO-264-3, TO-264AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id : 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V FET Feature : - Power Dissipation (Max) : 560W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-264 (IXFK) Package / Case : TO-264-3, TO-264AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V Vgs(th) (Max) @ Id : 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V FET Feature : - Power Dissipation (Max) : 600W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Chassis Mount Supplier Device Package : SOT-227B Package / Case : SOT-227-4, miniBLOC

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 85 mOhm @ 27.5A, 10V Vgs(th) (Max) @ Id : 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6700pF @ 25V FET Feature : - Power Dissipation (Max) : 600W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Chassis Mount Supplier Device Package : SOT-227B Package / Case : SOT-227-4, miniBLOC

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V Vgs(th) (Max) @ Id : 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs : 77nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V FET Feature : - Power Dissipation (Max) : 300W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-268 (IXFT) Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.9 Ohm @ 3A, 10V Vgs(th) (Max) @ Id : 5.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs : 54nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1770pF @ 25V FET Feature : - Power Dissipation (Max) : 180W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-268 (IXFT) Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 500 mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id : 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5500pF @ 25V FET Feature : - Power Dissipation (Max) : 500W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : PLUS247?3 Package / Case : TO-247-3

Manufacturer : IXYS-RF Packaging : Tube Series : HiPerRF? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 390 mOhm @ 12A, 10V Vgs(th) (Max) @ Id : 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6600pF @ 25V FET Feature : - Power Dissipation (Max) : 560W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : PLUS247?3 Package / Case : TO-247-3