Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 8 Ohm @ 140mA, 10V Vgs(th) (Max) @ Id : 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 15pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 3-CPH Package / Case : TO-236-3, SC-59, SOT-23-3

Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 18 Ohm @ 80mA, 10V Vgs(th) (Max) @ Id : 2.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 0.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 3-CPH Package / Case : TO-236-3, SC-59, SOT-23-3

系列 : - 制造商 : Microchip Technology FET 类型 : N 沟道 技术 : MOSFET（金属氧化物） 漏源电压（Vdss） : 60V 电流 - 连续漏极（Id）（25°C 时） : 410mA（Ta） 驱动电压（最大 Rds On，最小 Rds On） : 5V，10V 不同 Id，Vgs 时的 Rds On（最大值） : 3 欧姆 @ 1A，10V 不同 Id 时的 Vgs（th）（最大值） : 2V @ 1mA 不同 Vgs 时的栅极电荷 （Qg）（最大值） : 2V @ 1mA Vgs（最大值） : ±20V 不同 Vds 时的输入电容（Ciss）（最大值） : 50pF @ 24V FET 功能 : - 功率耗散（最大值） : 6.25W（Tc） 工作温度 : -55°C ~ 150°C（TJ） 安装类型 : 通孔 供应商器件封装 : TO-39 封装/外壳 : TO-205AD，TO-39-3 金属罐 包装 : 散装 零件状态 : 在售

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 3 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-205AD (TO-39) Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can