Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 60 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 26.1nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1007pF @ 20V FET Feature : - Power Dissipation (Max) : 2W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 60 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29.6nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 965pF @ 20V FET Feature : - Power Dissipation (Max) : 2.15W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-252-3 Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 2.9A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 80 mOhm @ 4A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 15.8nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 833pF @ 20V FET Feature : - Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-26 Package / Case : SOT-23-6

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 400 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 2.9nC @ 4.5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 219pF @ 30V FET Feature : - Power Dissipation (Max) : 625mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23 Package / Case : TO-236-3, SC-59, SOT-23-3

系列 : - 制造商 : Diodes Incorporated FET 类型 : P 沟道 技术 : MOSFET（金属氧化物） 漏源电压（Vdss） : 60V 电流 - 连续漏极（Id）（25°C 时） : 900mA（Ta） 驱动电压（最大 Rds On，最小 Rds On） : 4.5V，10V 不同 Id，Vgs 时的 Rds On（最大值） : 400 毫欧 @ 900mA，10V 不同 Id 时的 Vgs（th）（最大值） : 1V @ 250µA 不同 Vgs 时的栅极电荷 （Qg）（最大值） : 5.9nC @ 10V Vgs（最大值） : ±20V 不同 Vds 时的输入电容（Ciss）（最大值） : 219pF @ 30V FET 功能 : - 功率耗散（最大值） : 625mW（Ta） 工作温度 : -55°C ~ 150°C（TJ） 安装类型 : 表面贴装 供应商器件封装 : SOT-23-3 封装/外壳 : TO-236-3，SC-59，SOT-23-3 包装 : 标准卷带 零件状态 : 在售

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 390 mOhm @ 900mA, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 5.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 219pF @ 30V FET Feature : - Power Dissipation (Max) : 2W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA

Manufacturer : Diodes Incorporated Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : - Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : - Vgs(th) (Max) @ Id : - Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : - Operating Temperature : - Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : -

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 85 mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 24.2nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1021pF @ 30V FET Feature : - Power Dissipation (Max) : 2.11W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-252-3 Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 17.7nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 637pF @ 30V FET Feature : - Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-26 Package / Case : SOT-23-6

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 17.7nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 637pF @ 30V FET Feature : - Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-26 Package / Case : SOT-23-6

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 17.7nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 637pF @ 30V FET Feature : - Power Dissipation (Max) : 2W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA

Manufacturer : Diodes Incorporated Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 125 mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 17.7nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 637pF @ 30V FET Feature : - Power Dissipation (Max) : 2W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA