IRF5305PBF
IRF5305PBF
Manufacturer : Infineon Technologies
Packaging : Tube
Series : HEXFET?
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 55V
Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 25V
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3
¥10.25
¥8.68
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