EPC

Manufacturer : EPC Series : eGaN? Part Status : Active Type : Book Title : GaN Transistors for Efficient Power Conversion Author(s) : Alex Lidow, Johan Strydom, Michael de Rooij, Yanping Ma Publisher : Power Conversion Publications ISBN : -

Manufacturer : EPC Packaging : Tape & Reel (TR) Alternate Packaging Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V Vgs (Max) : +6V, -5V Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 125°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (11-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 36A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 9nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 900pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (11-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Obsolete FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V Vgs (Max) : +6V, -5V Input Capacitance (Ciss) (Max) @ Vds : 205pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 125°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (5-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 6A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 30 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 220pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (5-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 125°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 22A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 25 mOhm @ 12A, 5V Vgs(th) (Max) @ Id : 2.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs : 5.3nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 540pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (7-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 5V Vgs (Max) : +6V, -5V Input Capacitance (Ciss) (Max) @ Vds : 145pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 125°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 100 mOhm @ 3A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 1.3nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (4-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Alternate Packaging Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 16 mOhm @ 5A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2.8nC @ 5V Vgs (Max) : +6V, -5V Input Capacitance (Ciss) (Max) @ Vds : 325pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (5-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 16 mOhm @ 10A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (5-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 33A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 4 mOhm @ 33A, 5V Vgs(th) (Max) @ Id : 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs : 11.6nC @ 5V Vgs (Max) : +6V, -5V Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (11-Solder Bar) Package / Case : Die