Global Power Technologies Group, Inc.

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Type : Single Phase Technology : Silicon Carbide Schottky Voltage - Peak Reverse (Max) : 1.2kV Current - Average Rectified (Io) : 30A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Type : Single Phase Technology : Silicon Carbide Schottky Voltage - Peak Reverse (Max) : 1.2kV Current - Average Rectified (Io) : 30A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Tube Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) (per Diode) : 30A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : - Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Tube Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) (per Diode) : 30A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 30A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : - Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) (per Diode) : 45A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 45A Speed : Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) : - Current - Reverse Leakage @ Vr : 300µA @ 1200V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 600V Current - Average Rectified (Io) (per Diode) : 50A Voltage - Forward (Vf) (Max) @ If : 1.8V @ 50A Speed : Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) : - Current - Reverse Leakage @ Vr : 100µA @ 600V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 600V Current - Average Rectified (Io) (per Diode) : 50A Voltage - Forward (Vf) (Max) @ If : 1.8V @ 50A Speed : Fast Recovery = 200mA (Io) Reverse Recovery Time (trr) : - Current - Reverse Leakage @ Vr : 100µA @ 600V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Series : - Part Status : Active Type : - Configuration : - Current : 150A Voltage : 1.7kV Voltage - Isolation : 2500Vrms Package / Case : SOT-227-4, miniBLOC

Manufacturer : Global Power Technologies Group Packaging : Bulk Series : - Part Status : Active Diode Configuration : 2 Independent Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) (per Diode) : 60A Voltage - Forward (Vf) (Max) @ If : 1.7V @ 60A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Chassis Mount Package / Case : SOT-227-4, miniBLOC Supplier Device Package : SOT-227

Manufacturer : Global Power Technologies Group Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 400V Current - Continuous Drain (Id) @ 25°C : 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.7nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 25V FET Feature : - Power Dissipation (Max) : 30W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D-Pak Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Manufacturer : Global Power Technologies Group Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 400V Current - Continuous Drain (Id) @ 25°C : 2A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 3.7nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 25V FET Feature : - Power Dissipation (Max) : 30W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : I-PAK Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

Manufacturer : Global Power Technologies Group Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 2.8 Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 9.2nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 395pF @ 25V FET Feature : - Power Dissipation (Max) : 52W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D-Pak Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63