Wolfspeed

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Zero Recovery? Part Status : Obsolete Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) : 17.5A (DC) Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 200µA @ 1200V Capacitance @ Vr, F : 455pF @ 0V, 1MHz Mounting Type : Through Hole Package / Case : TO-220-2 Supplier Device Package : TO-220-2 Operating Temperature - Junction : -55°C ~ 175°C

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Zero Recovery? Part Status : Obsolete Diode Configuration : 1 Pair Common Cathode Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1200V Current - Average Rectified (Io) (per Diode) : 10A Voltage - Forward (Vf) (Max) @ If : 1.8V @ 5A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 200µA @ 1200V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-FET? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 34 mOhm @ 50A, 20V Vgs(th) (Max) @ Id : 2.4V @ 10mA Gate Charge (Qg) (Max) @ Vgs : 161nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 2788pF @ 1000V FET Feature : - Power Dissipation (Max) : 463W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-FET? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 52 mOhm @ 40A, 20V Vgs(th) (Max) @ Id : 2.8V @ 10mA Gate Charge (Qg) (Max) @ Vgs : 115nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 1893pF @ 1000V FET Feature : - Power Dissipation (Max) : 330W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C2M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1700V Current - Continuous Drain (Id) @ 25°C : 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 70 mOhm @ 50A, 20V Vgs(th) (Max) @ Id : 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1kV FET Feature : - Power Dissipation (Max) : 520W (Tc) Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C2M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1700V Current - Continuous Drain (Id) @ 25°C : 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 59 mOhm @ 50A, 20V Vgs(th) (Max) @ Id : 4V @ 18mA Gate Charge (Qg) (Max) @ Vgs : 188nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 3672pF @ 1000V FET Feature : - Power Dissipation (Max) : 520W (Tc) Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-4L Package / Case : TO-247-4

Manufacturer : Cree/Wolfspeed Packaging : Bulk Series : C2M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 98 mOhm @ 20A, 20V Vgs(th) (Max) @ Id : 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 62nC @ 5V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 1000V FET Feature : - Power Dissipation (Max) : 192W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C2M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1700V Current - Continuous Drain (Id) @ 25°C : 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 125 mOhm @ 28A, 20V Vgs(th) (Max) @ Id : 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs : 120nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 1000V FET Feature : - Power Dissipation (Max) : 277W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-4L Package / Case : TO-247-4

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-FET? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 196 mOhm @ 10A, 20V Vgs(th) (Max) @ Id : 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 32.6nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 527pF @ 800V FET Feature : - Power Dissipation (Max) : 125W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-FET? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 370 mOhm @ 6A, 20V Vgs(th) (Max) @ Id : 2.8V @ 1.25mA (Typ) Gate Charge (Qg) (Max) @ Vgs : 20.4nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 259pF @ 1000V FET Feature : - Power Dissipation (Max) : 62.5W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-FET? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1700V Current - Continuous Drain (Id) @ 25°C : 4.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 2A, 20V Vgs(th) (Max) @ Id : 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 191pF @ 1000V FET Feature : - Power Dissipation (Max) : 69W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Bulk Series : C2M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1700V Current - Continuous Drain (Id) @ 25°C : 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 20V Rds On (Max) @ Id, Vgs : 1.4 Ohm @ 2A, 20V Vgs(th) (Max) @ Id : 3.1V @ 500µA (Typ) Gate Charge (Qg) (Max) @ Vgs : 13nC @ 20V Vgs (Max) : +25V, -10V Input Capacitance (Ciss) (Max) @ Vds : 200pF @ 1000V FET Feature : - Power Dissipation (Max) : 78W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK (7-Lead) Package / Case : TO-263-7 (Straight Leads)