Wolfspeed

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-Rec? Part Status : Active Diode Configuration : 1 Pair Common Cathode Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 650V Current - Average Rectified (Io) (per Diode) : 10A (DC) Voltage - Forward (Vf) (Max) @ If : 1.8V @ 10A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 60µA @ 650V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-Rec? Part Status : Active Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 1700V Current - Average Rectified (Io) : 26.3A (DC) Voltage - Forward (Vf) (Max) @ If : 2.5V @ 25A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 100µA @ 1700V Capacitance @ Vr, F : 2079pF @ 0V, 1MHz Mounting Type : Through Hole Package / Case : TO-247-2 Supplier Device Package : TO-247-2 Operating Temperature - Junction : -55°C ~ 175°C

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : Z-Rec? Part Status : Active Diode Configuration : 1 Pair Common Cathode Diode Type : Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) : 650V Current - Average Rectified (Io) (per Diode) : 39A (DC) Voltage - Forward (Vf) (Max) @ If : 1.8V @ 16A Speed : No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) : 0ns Current - Reverse Leakage @ Vr : 95µA @ 650V Operating Temperature - Junction : -55°C ~ 175°C Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 900V Current - Continuous Drain (Id) @ 25°C : 63A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 39 mOhm @ 35A, 15V Vgs(th) (Max) @ Id : 3.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs : 87nC @ 15V Vgs (Max) : +15V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1864pF @ 600V FET Feature : - Power Dissipation (Max) : 149W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-4L Package / Case : TO-247-4

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 900V Current - Continuous Drain (Id) @ 25°C : 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 30.4nC @ 15V Vgs (Max) : +18V, -8V Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V FET Feature : - Power Dissipation (Max) : 125W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Alternate Packaging Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 900V Current - Continuous Drain (Id) @ 25°C : 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 30nC @ 15V Vgs (Max) : +19V, -8V Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V FET Feature : - Power Dissipation (Max) : 113W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK-7 Package / Case : TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Manufacturer : Cree/Wolfspeed Packaging : Tube Alternate Packaging Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V Vgs (Max) : +15V, -4V Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V FET Feature : - Power Dissipation (Max) : 113.5W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK-7 Package / Case : TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1000V Current - Continuous Drain (Id) @ 25°C : 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 78 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 15V Vgs (Max) : +19V, -8V Input Capacitance (Ciss) (Max) @ Vds : 660pF @ 600V FET Feature : - Power Dissipation (Max) : 113.5W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : - Supplier Device Package : TO-247-4L Package / Case : TO-247-4

Manufacturer : Cree/Wolfspeed Packaging : Bulk Alternate Packaging Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V Vgs (Max) : +19V, -8V Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V FET Feature : - Power Dissipation (Max) : 113.6W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK-7 Package / Case : TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 90 mOhm @ 20A, 15V Vgs(th) (Max) @ Id : 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 51nC @ 15V Vgs (Max) : +19V, -8V Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 1000V FET Feature : - Power Dissipation (Max) : 113.6W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-4L Package / Case : TO-247-4

Manufacturer : Cree/Wolfspeed Packaging : Tube Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 900V Current - Continuous Drain (Id) @ 25°C : 23A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id : 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V Vgs (Max) : +18V, -8V Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V FET Feature : - Power Dissipation (Max) : 97W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3

Manufacturer : Cree/Wolfspeed Packaging : Tube Alternate Packaging Series : C3M? Part Status : Active FET Type : N-Channel Technology : SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) : 900V Current - Continuous Drain (Id) @ 25°C : 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V Vgs(th) (Max) @ Id : 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs : 17.3nC @ 15V Vgs (Max) : +18V, -8V Input Capacitance (Ciss) (Max) @ Vds : 350pF @ 600V FET Feature : - Power Dissipation (Max) : 83W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK-7 Package / Case : TO-263-8, D2Pak (7 Leads + Tab), TO-263CA