Manufacturer : Microchip Technology Packaging : Bulk Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 24V FET Feature : - Power Dissipation (Max) : 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Vishay Siliconix Packaging : Tube Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 90V Current - Continuous Drain (Id) @ 25°C : 860mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 4 Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 725mW (Ta), 6.25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AD, TO-39-3 Metal Can

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 210 mOhm @ 14A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 4W (Ta), 75W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-204AA Package / Case : TO-204AA, TO-3

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 490 mOhm @ 9A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 4W (Ta), 75W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-204AA Package / Case : TO-204AA, TO-3

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 400V Current - Continuous Drain (Id) @ 25°C : 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.22 Ohm @ 5.5A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 4W (Ta), 75W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-204AA Package / Case : TO-204AA, TO-3