Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 4.46nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 800mW (Ta), 25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 18-ULCC (9.14x7.49) Package / Case : 18-CLCC

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 360 mOhm @ 11A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 4W (Ta), 75W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-204AA (TO-3) Package / Case : TO-204AA, TO-3

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 320 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 34.8nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 800mW (Ta), 25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AF Metal Can

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 300 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 34.8nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 800mW (Ta), 25W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 18-ULCC (9.14x7.49) Package / Case : 18-CLCC

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.69A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 2.6 Ohm @ 1.07A, 5V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 1nC @ 5V Vgs (Max) : ±10V Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : 8.33W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-39 Package / Case : TO-205AF Metal Can

Manufacturer : ON Semiconductor Packaging : Bulk Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)

Manufacturer : STMicroelectronics Packaging : Bulk Series : STripFET? Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 350mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 2nC @ 5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 43pF @ 25V FET Feature : - Power Dissipation (Max) : 1W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)

Manufacturer : NXP USA Inc. Packaging : Tape & Box (TB) Series : TrenchMOS? Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 300mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 40pF @ 10V FET Feature : - Power Dissipation (Max) : 830mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Manufacturer : ON Semiconductor Packaging : Bulk Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)

Manufacturer : ON Semiconductor Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)

Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)