Manufacturer : Alpha & Omega Semiconductor Inc. Packaging : Tube Series : Alpha IGBT? Part Status : Active IGBT Type : - Voltage - Collector Emitter Breakdown (Max) : 650V Current - Collector (Ic) (Max) : 40A Current - Collector Pulsed (Icm) : 60A Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 20A Power - Max : 45W Switching Energy : 580µJ (on), 280µJ (off) Input Type : Standard Gate Charge : 46nC Td (on/off) @ 25°C : 26ns/123ns Test Condition : 400V, 20A, 15 Ohm, 15V Reverse Recovery Time (trr) : 292ns Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220

Manufacturer : Alpha & Omega Semiconductor Inc. Packaging : Tube Series : Alpha IGBT? Part Status : Active IGBT Type : - Voltage - Collector Emitter Breakdown (Max) : 650V Current - Collector (Ic) (Max) : 10A Current - Collector Pulsed (Icm) : 15A Vce(on) (Max) @ Vge, Ic : 1.98V @ 15V, 5A Power - Max : 25W Switching Energy : 80µJ (on), 70µJ (off) Input Type : Standard Gate Charge : 14nC Td (on/off) @ 25°C : 8.5ns/106ns Test Condition : 400V, 5A, 60 Ohm, 15V Reverse Recovery Time (trr) : 195ns Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220

Manufacturer : Alpha & Omega Semiconductor Inc. Packaging : Tube Series : Alpha IGBT? Part Status : Active IGBT Type : - Voltage - Collector Emitter Breakdown (Max) : 650V Current - Collector (Ic) (Max) : 80A Current - Collector Pulsed (Icm) : 120A Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 40A Power - Max : 300W Switching Energy : 1.27mJ (on), 460µJ (off) Input Type : Standard Gate Charge : 63nC Td (on/off) @ 25°C : 41ns/130ns Test Condition : 400V, 40A, 7.5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 245A Current - Collector Pulsed (Icm) : 300A Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A Power - Max : 960W Switching Energy : 11mJ (on), 9.5mJ (off) Input Type : Standard Gate Charge : 540nC Td (on/off) @ 25°C : 50ns/615ns Test Condition : 800V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Variant Supplier Device Package : -

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 229A Current - Collector Pulsed (Icm) : 300A Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 100A Power - Max : 625W Switching Energy : 4.75mJ (on), 2.675mJ (off) Input Type : Standard Gate Charge : 600nC Td (on/off) @ 25°C : 31ns/310ns Test Condition : 400V, 100A, 1 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-264-3, TO-264AA Supplier Device Package : TO-264 [L]

Manufacturer : Microsemi Corporation Packaging : Tube Series : Thunderbolt IGBT? Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 148A Current - Collector Pulsed (Icm) : 300A Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 100A Power - Max : 500W Switching Energy : 3.25mJ (on), 3.125mJ (off) Input Type : Standard Gate Charge : 460nC Td (on/off) @ 25°C : 40ns/320ns Test Condition : 400V, 100A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Variant Supplier Device Package : -

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 8? Part Status : Obsolete IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 183A Current - Collector Pulsed (Icm) : 307A Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 62A Power - Max : 780W Switching Energy : 1.354mJ (on), 1.614mJ (off) Input Type : Standard Gate Charge : 294nC Td (on/off) @ 25°C : 28ns/212ns Test Condition : 400V, 62A, 4.7 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Variant Supplier Device Package : -

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Obsolete IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 25A Current - Collector Pulsed (Icm) : 24A Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A Power - Max : 156W Switching Energy : 300µJ (on), 285µJ (off) Input Type : Standard Gate Charge : 65nC Td (on/off) @ 25°C : 7ns/100ns Test Condition : 800V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Obsolete IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 25A Current - Collector Pulsed (Icm) : 44A Vce(on) (Max) @ Vge, Ic : 3V @ 15V, 8A Power - Max : 156W Switching Energy : 300µJ (on), 285µJ (off) Input Type : Standard Gate Charge : 65nC Td (on/off) @ 25°C : 7ns/100ns Test Condition : 800V, 8A, 10 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220 [K]

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Obsolete IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 41A Current - Collector Pulsed (Icm) : 45A Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 11A Power - Max : 187W Switching Energy : 46µJ (on), 90µJ (off) Input Type : Standard Gate Charge : 40nC Td (on/off) @ 25°C : 7ns/29ns Test Condition : 400V, 11A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Obsolete IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 41A Current - Collector Pulsed (Icm) : 50A Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 13A Power - Max : 250W Switching Energy : 114µJ (on), 165µJ (off) Input Type : Standard Gate Charge : 55nC Td (on/off) @ 25°C : 9ns/28ns Test Condition : 600V, 13A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220 [K]

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Obsolete IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 45A Current - Collector Pulsed (Icm) : 45A Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 15A Power - Max : 195W Switching Energy : 410µJ (on), 950µJ (off) Input Type : Standard Gate Charge : 90nC Td (on/off) @ 25°C : 10ns/150ns Test Condition : 800V, 15A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-220-3 Supplier Device Package : TO-220 [K]