APT25GP120BDQ1G
APT25GP120BDQ1G
Manufacturer : Microsemi Corporation
Packaging : Tube
Series : POWER MOS 7?
Part Status : Active
IGBT Type : PT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 69A
Current - Collector Pulsed (Icm) : 90A
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Power - Max : 417W
Switching Energy : 500µJ (on), 440µJ (off)
Input Type : Standard
Gate Charge : 110nC
Td (on/off) @ 25°C : 12ns/70ns
Test Condition : 600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247 [B]
Availability: 100 in stock
$18.91
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