Transphorm

Manufacturer : Transphorm Packaging : Bulk Series : - Part Status : Last Time Buy FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 70A (Tc) Rds On (Max) @ Id, Vgs : 34 mOhm @ 30A, 8V Vgs(th) (Max) @ Id : - Gate Charge (Qg) (Max) @ Vgs : 28nC @ 8V Input Capacitance (Ciss) (Max) @ Vds : 2260pF @ 100V Power - Max : 470W Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : Module Supplier Device Package : Module

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 65W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 4-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 65W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 65W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 350 mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 65W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 60 mOhm @ 22A, 8V Vgs(th) (Max) @ Id : 2.6V @ 700µA Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 400V FET Feature : - Power Dissipation (Max) : 125W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247 Package / Case : TO-247-3

Manufacturer : Transphorm Packaging : Tube Series : Automotive, AEC-Q101 Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : 62 mOhm @ 22A, 8V Vgs(th) (Max) @ Id : 2.6V @ 700µA Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 2200pF @ 400V FET Feature : - Power Dissipation (Max) : 125W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247 Package / Case : TO-247-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 4-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 480V FET Feature : - Power Dissipation (Max) : 81W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 4-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 81W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 480V FET Feature : - Power Dissipation (Max) : 81W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN