Transphorm

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 17A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 9.3nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 480V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 180 mOhm @ 10A, 8V Vgs(th) (Max) @ Id : 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 720pF @ 480V FET Feature : - Power Dissipation (Max) : 81W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 41 mOhm @ 32A, 8V Vgs(th) (Max) @ Id : 2.65V @ 700µA Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 2197pF @ 400V FET Feature : - Power Dissipation (Max) : 178W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247 Package / Case : TO-247-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V Vgs(th) (Max) @ Id : 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 4-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V Vgs(th) (Max) @ Id : 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V Vgs(th) (Max) @ Id : 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Not For New Designs FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 130 mOhm @ 14A, 8V Vgs(th) (Max) @ Id : 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs : 42nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 3-PQFN (8x8) Package / Case : 3-PowerDFN

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Last Time Buy FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : - Vgs(th) (Max) @ Id : - Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -55°C ~ 150°C Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 130 mOhm @ 13A, 8V Vgs(th) (Max) @ Id : 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 400V FET Feature : - Power Dissipation (Max) : 96W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3

Manufacturer : Transphorm Packaging : Tube Series : - Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 650V Current - Continuous Drain (Id) @ 25°C : 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 8V Rds On (Max) @ Id, Vgs : 72 mOhm @ 17A, 8V Vgs(th) (Max) @ Id : 2.6V @ 400uA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 8V Vgs (Max) : ±18V Input Capacitance (Ciss) (Max) @ Vds : 1130pF @ 400V FET Feature : - Power Dissipation (Max) : 104W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3