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Part Number
Manufacturer
Description
Unit Price
In Stock

2N7000-D75Z

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
From $0.36
743 in stock

2N7000G

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Bulk Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)
0
100 in stock

2N7000-G

Microchip Technology
Manufacturer : Microchip Technology Packaging : Bulk Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Tj) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 1W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA)
From $0.16
5367 in stock

2N7000RLRA

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

2N7000RLRAG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

2N7000RLRMG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Tape & Box (TB) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

2N7000RLRPG

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Tape & Box (TB) Series : - Part Status : Obsolete FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
0
100 in stock

2N7000TA

Aptina / ON Semiconductor
Manufacturer : ON Semiconductor Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 400mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-92-3 Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
From $0.26
2445 in stock

2N7002 BK

Central Semiconductor
Manufacturer : Central Semiconductor Corp Packaging : Bulk Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 0.59nC @ 4.5V Vgs (Max) : 40V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Ta) Operating Temperature : -65°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23 Package / Case : TO-236-3, SC-59, SOT-23-3
0
100 in stock

2N7002 TR

Central Semiconductor
Manufacturer : Central Semiconductor Corp Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : 40V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Ta) Operating Temperature : -65°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23 Package / Case : TO-236-3, SC-59, SOT-23-3
From $0.22
80112 in stock

2N7002 TR13

Central Semiconductor
Manufacturer : Central Semiconductor Corp Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Discontinued at FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 115mA (Tc) Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V Rds On (Max) @ Id, Vgs : 7.5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 0.59nC @ 4.5V Vgs (Max) : 40V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V FET Feature : - Power Dissipation (Max) : 350mW (Ta) Operating Temperature : -65°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23 Package / Case : TO-236-3, SC-59, SOT-23-3
From $0.22
4290 in stock

2N7002,215

Nexperia
Manufacturer : Nexperia USA Inc. Packaging : Cut Tape (CT) Alternate Packaging Series : TrenchMOS? Part Status : Active FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 10V FET Feature : - Power Dissipation (Max) : 830mW (Ta) Operating Temperature : -65°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-236AB (SOT23) Package / Case : TO-236-3, SC-59, SOT-23-3
From $0.21
100 in stock