Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 40A Current - Collector Pulsed (Icm) : 60A Vce(on) (Max) @ Vge, Ic : 1.9V @ 15V, 20A Power - Max : 136W Switching Energy : 230µJ (on), 580µJ (off) Input Type : Standard Gate Charge : 120nC Td (on/off) @ 25°C : 9ns/140ns Test Condition : 400V, 20A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : Thunderbolt IGBT? Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 43A Current - Collector Pulsed (Icm) : 80A Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A Power - Max : 174W Switching Energy : 215µJ (on), 245µJ (off) Input Type : Standard Gate Charge : 100nC Td (on/off) @ 25°C : 8ns/80ns Test Condition : 400V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : Thunderbolt IGBT? Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 43A Current - Collector Pulsed (Icm) : 80A Vce(on) (Max) @ Vge, Ic : 2.5V @ 15V, 20A Power - Max : 174W Switching Energy : 215µJ (on), 245µJ (off) Input Type : Standard Gate Charge : 100nC Td (on/off) @ 25°C : 8ns/80ns Test Condition : 400V, 20A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 67A Current - Collector Pulsed (Icm) : 75A Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A Power - Max : 272W Switching Energy : 2.15µJ (off) Input Type : Standard Gate Charge : 155nC Td (on/off) @ 25°C : 22ns/280ns Test Condition : 800V, 25A, 1 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 67A Current - Collector Pulsed (Icm) : 75A Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 25A Power - Max : 272W Switching Energy : - Input Type : Standard Gate Charge : 155nC Td (on/off) @ 25°C : 22ns/280ns Test Condition : 800V, 25A, 1 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA Supplier Device Package : D3Pak

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Active IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 69A Current - Collector Pulsed (Icm) : 90A Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A Power - Max : 417W Switching Energy : 500µJ (on), 440µJ (off) Input Type : Standard Gate Charge : 110nC Td (on/off) @ 25°C : 12ns/70ns Test Condition : 600V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Not For New Designs IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 900V Current - Collector (Ic) (Max) : 72A Current - Collector Pulsed (Icm) : 110A Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A Power - Max : 417W Switching Energy : 370µJ (off) Input Type : Standard Gate Charge : 110nC Td (on/off) @ 25°C : 13ns/55ns Test Condition : 600V, 40A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Tube Series : POWER MOS 7? Part Status : Active IGBT Type : PT Voltage - Collector Emitter Breakdown (Max) : 900V Current - Collector (Ic) (Max) : 72A Current - Collector Pulsed (Icm) : 110A Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A Power - Max : 417W Switching Energy : 370µJ (off) Input Type : Standard Gate Charge : 110nC Td (on/off) @ 25°C : 13ns/55ns Test Condition : 600V, 25A, 5 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247 [B]

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 75A Current - Collector Pulsed (Icm) : 100A Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A Power - Max : 521W Switching Energy : 742µJ (on), 427µJ (off) Input Type : Standard Gate Charge : 203nC Td (on/off) @ 25°C : 16ns/122ns Test Condition : 600V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 75A Current - Collector Pulsed (Icm) : 100A Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A Power - Max : 521W Switching Energy : 742µJ (on), 427µJ (off) Input Type : Standard Gate Charge : 203nC Td (on/off) @ 25°C : 16ns/122ns Test Condition : 600V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247

Manufacturer : Microsemi Corporation Packaging : Tube Series : - Part Status : Obsolete IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 75A Current - Collector Pulsed (Icm) : 100A Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A Power - Max : 521W Switching Energy : 434µJ (on), 466µJ (off) Input Type : Standard Gate Charge : 203nC Td (on/off) @ 25°C : 16ns/122ns Test Condition : 600V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247

Manufacturer : Microsemi Corporation Packaging : Bulk Series : - Part Status : Active IGBT Type : NPT Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 75A Current - Collector Pulsed (Icm) : 100A Vce(on) (Max) @ Vge, Ic : 3.2V @ 15V, 25A Power - Max : 521W Switching Energy : 742µJ (on), 427µJ (off) Input Type : Standard Gate Charge : 203nC Td (on/off) @ 25°C : 16ns/122ns Test Condition : 600V, 25A, 4.3 Ohm, 15V Reverse Recovery Time (trr) : - Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-268-3, D鲁Pak (2 Leads + Tab), TO-268AA Supplier Device Package : D3Pak