EPC

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 60A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 1.5 mOhm @ 37A, 5V Vgs(th) (Max) @ Id : 2.5V @ 19mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 2100pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Obsolete FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 300V Current - Continuous Drain (Id) @ 25°C : 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 150 mOhm @ 3A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 194pF @ 240V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tray Series : eGaN? Part Status : Obsolete FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 300V Current - Continuous Drain (Id) @ 25°C : 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 150 mOhm @ 3A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 1.85nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 194pF @ 240V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (12-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 48A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs : 13nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1410pF @ 40V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs : 18nC @ 5V Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs : 18nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs : 17nC @ 5V Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 300V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 2.6 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 15mA Gate Charge (Qg) (Max) @ Vgs : 17nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 300V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 48A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 4 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs : 15nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1530pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 48A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 4 mOhm @ 30A, 5V Vgs(th) (Max) @ Id : 2.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs : 15nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1530pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 150V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 75V FET Feature : - Power Dissipation (Max) : - Operating Temperature : - Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 150V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 7 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 9mA Gate Charge (Qg) (Max) @ Vgs : 10nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1140pF @ 75V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die