EPC

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 15V Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 28 mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 100pF @ 6V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 7 mOhm @ 16A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 685pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 25 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 3.6nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 32A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 10.2nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 1050pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 16A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 5 mOhm @ 15A, 5V Vgs(th) (Max) @ Id : 2.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs : 7.6nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 805pF @ 20V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 350V Current - Continuous Drain (Id) @ 25°C : 6.3A Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 65 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs : 4.3nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 505pF @ 280V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Outline (12-Solder Bar) Package / Case : Die

Manufacturer : EPC Packaging : - Series : * Part Status : Active FET Type : - Technology : - Drain to Source Voltage (Vdss) : - Current - Continuous Drain (Id) @ 25°C : - Drive Voltage (Max Rds On, Min Rds On) : - Rds On (Max) @ Id, Vgs : - Vgs(th) (Max) @ Id : - Gate Charge (Qg) (Max) @ Vgs : - Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : - FET Feature : - Power Dissipation (Max) : - Operating Temperature : - Mounting Type : - Supplier Device Package : - Package / Case : -

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 25 mOhm @ 3A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs : 2.3nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Tray Series : eGaN? Part Status : Discontinued at FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta), 40A (Ta) Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V Vgs(th) (Max) @ Id : 2.5V @ 4mA, 2.5V @ 16mA Gate Charge (Qg) (Max) @ Vgs : 4.9nC @ 15V, 19nC @ 15V Input Capacitance (Ciss) (Max) @ Vds : 475pF @ 15V, 1960pF @ 15V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die