EPC

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 48A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 8.8nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 140°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 10 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 940pF @ 100V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 45 mOhm @ 1A, 5V Vgs(th) (Max) @ Id : 2.5V @ 800µA Gate Charge (Qg) (Max) @ Vgs : 1.15nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 115pF @ 30V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 65 mOhm @ 1A, 5V Vgs(th) (Max) @ Id : 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs : 0.91nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : - Part Status : Obsolete FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 73 mOhm @ 1A, 5V Vgs(th) (Max) @ Id : 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs : 120nC @ 50V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 550 mOhm @ 100mA, 5V Vgs(th) (Max) @ Id : 2.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs : 0.12nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 14pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 550 mOhm @ 100mA, 5V Vgs(th) (Max) @ Id : 2.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs : 0.12nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 12.5pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 3.3 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id : 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.044nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 8.4pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 3.3 Ohm @ 50mA, 5V Vgs(th) (Max) @ Id : 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.044nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 8.4pF @ 50V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 25 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2.4nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 40V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Tape & Reel (TR) Series : eGaN? Part Status : Discontinued at FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 6.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 22 mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2nC @ 5V Vgs (Max) : +6V, -4V Input Capacitance (Ciss) (Max) @ Vds : 210pF @ 40V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Series : eGaN? Part Status : Active FET Type : N-Channel Technology : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 15V Current - Continuous Drain (Id) @ 25°C : 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 30 mOhm @ 1.5A, 5V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 0.93nC @ 5V Vgs (Max) : - Input Capacitance (Ciss) (Max) @ Vds : 105pF @ 6V FET Feature : - Power Dissipation (Max) : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : Die Package / Case : Die