EPC

Manufacturer : EPC Packaging : Bulk Alternate Packaging Series : eGaN? Part Status : Discontinued at FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 9.5A Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id : 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A Rds On (Max) @ Id, Vgs : 70 mOhm @ 2A, 5V Vgs(th) (Max) @ Id : 2.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs : 0.73nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 75pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 9-VFBGA Supplier Device Package : 9-BGA (1.35x1.35)

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Discontinued at FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA Rds On (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 9-VFBGA Supplier Device Package : 9-BGA (1.35x1.35)

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V, 100V Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 9-VFBGA Supplier Device Package : 9-BGA (1.35x1.35)

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 3 N-Channel (Half Bridge + Synchronous Bootstrap) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V, 100V Current - Continuous Drain (Id) @ 25°C : 1.7A, 500mA Rds On (Max) @ Id, Vgs : 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V Vgs(th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA Gate Charge (Qg) (Max) @ Vgs : 0.22nC @ 5V, 0.044nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 22pF @ 30V, 7pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 9-VFBGA Supplier Device Package : 9-BGA (1.35x1.35)

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Dual) Common Drain FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 120V Current - Continuous Drain (Id) @ 25°C : 3.4A Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id : 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : - Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Dual) Common Source FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 120V Current - Continuous Drain (Id) @ 25°C : 3.4A Rds On (Max) @ Id, Vgs : 60 mOhm @ 4A, 5V Vgs(th) (Max) @ Id : 2.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs : 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 80pF @ 60V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 16A (Ta) Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : - Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 16A (Ta) Rds On (Max) @ Id, Vgs : 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs : 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 15V, 590pF @ 15V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die