EPC

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 3mA, 2.5V @ 12mA Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V, 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V, 1200pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Tray Series : eGaN? Part Status : Discontinued at FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2mA Gate Charge (Qg) (Max) @ Vgs : 2.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Tray Series : eGaN? Part Status : Discontinued at FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 23A (Tj) Rds On (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 30V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 28A Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 760pF @ 40V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs : 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 7600pF @ 40V Power - Max : - Operating Temperature : - Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Tray Alternate Packaging Series : eGaN? Part Status : Discontinued at FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 23A Rds On (Max) @ Id, Vgs : 6.3 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs : 7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 800pF @ 50V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die

Manufacturer : EPC Packaging : Cut Tape (CT) Alternate Packaging Series : eGaN? Part Status : Active FET Type : 2 N-Channel (Half Bridge) FET Feature : GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 9.5A, 38A Rds On (Max) @ Id, Vgs : 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V Vgs(th) (Max) @ Id : 2.5V @ 2.5mA, 2.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs : 2.5nC @ 5V, 10nC @ 5V Input Capacitance (Ciss) (Max) @ Vds : 300pF @ 40V, 1100pF @ 40V Power - Max : - Operating Temperature : -40°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : Die Supplier Device Package : Die